Silicon nitride herea silicon carbide kurupae tapawha

Whakaahuatanga Poto:

Ko te Si3N4 i herea te SiC hei momo mea hou, e whakamahia whanuitia ana. Ko te pāmahana tono ko te 1400 C. He pai ake te pumau o te waiariki, te wiri waiariki, he pai ake i nga mea whakamaarama.-te waikura, te waikura teitei, te kakahu-atete, te kaha piko te kaha.Ka taea e ia te aukati i te waikura me te whiu, kia kore e poke, kia tere te kawe wera i roto i te whakarewa whakarewa penei i te AL,Pb,Zn,Cu ect.


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描述

Silicon nitride herea silicon carbide

Si3N4 herea SiC taonga parakore uku, he mea konatunatua ki te SIC parakore pai paura me te Silicon paura, i muri i te paheke akoranga makanga, tauhohenga sintered i raro i 1400~1500°C.I te wa o te mahi sintering, ka whakakiia te Nitrogen parakore teitei ki roto i te oumu, katahi ka tauhohe te silicon ki te Nitrogen me te whakaputa Si3N4, Na reira ko te Si3N4 herea nga rauemi SiC he mea tito ki te silicon nitride (23%) me te silicon carbide (75%) hei rauemi mata matua. , ka konatunatua ki nga mea kaiao, ka hangaia e te ranunga, te tangohanga, te ringihanga ranei, ka mahia i muri i te whakamaroke me te hauota.

 

特点

Nga ahuatanga me nga painga:

1.High pāmahana kātakí
2.High kawe wera me te ru ātete
3.High kaha miihini me te aukati abrasion
4.Excellent pūngao pai me te waikura ātete

Ka whakaratohia e matou te kounga teitei me te miihini miihini NSiC nga waahanga uku e mahi ana

1.Slip makanga
2.Whakaputa
3.Uni Axial Pressing
4.Isostatic Pressing

Rauraraunga Rauemi

> Hanga Matū Sic 75%
Si3N4 ≥23%
Free Si 0%
Kiato rahi (g/cm3) 2.702.80
Te porosity (%) 1215
Te kaha piko ki te 20 ℃(MPa) 180190
Te kaha piko ki te 1200 ℃(MPa) 207
Te kaha piko ki te 1350 ℃(MPa) 210
Te kaha kōpeke i te 20 ℃(MPa) 580
Ko te kawe wera i te 1200 ℃(w/mk) 19.6
Te whakarea whakareatanga werawera i1200 ℃(x 10-6/C) 4.70
Te ātete ru werawera Tino pai
Max.pāmahana (℃) 1600
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