Silicon nitride herea silicon carbide
Si3N4 herea SiC taonga parakore uku, he mea konatunatua ki te SIC parakore pai paura me te Silicon paura, i muri i te paheke akoranga makanga, tauhohenga sintered i raro i 1400~1500°C.I te wa o te mahi sintering, ka whakakiia te Nitrogen parakore teitei ki roto i te oumu, katahi ka tauhohe te silicon ki te Nitrogen me te whakaputa Si3N4, Na reira ko te Si3N4 herea nga rauemi SiC he mea tito ki te silicon nitride (23%) me te silicon carbide (75%) hei rauemi mata matua. , ka konatunatua ki nga mea kaiao, ka hangaia e te ranunga, te tangohanga, te ringihanga ranei, ka mahia i muri i te whakamaroke me te hauota.
Nga ahuatanga me nga painga:
1.High pāmahana kātakí
2.High kawe wera me te ru ātete
3.High kaha miihini me te aukati abrasion
4.Excellent pūngao pai me te waikura ātete
Ka whakaratohia e matou te kounga teitei me te miihini miihini NSiC nga waahanga uku e mahi ana
1.Slip makanga
2.Whakaputa
3.Uni Axial Pressing
4.Isostatic Pressing
Rauraraunga Rauemi
> Hanga Matū | Sic | 75% |
Si3N4 | ≥23% | |
Free Si | 0% | |
Kiato rahi (g/cm3) | 2.70~2.80 | |
Te porosity (%) | 12~15 | |
Te kaha piko ki te 20 ℃(MPa) | 180~190 | |
Te kaha piko ki te 1200 ℃(MPa) | 207 | |
Te kaha piko ki te 1350 ℃(MPa) | 210 | |
Te kaha kōpeke i te 20 ℃(MPa) | 580 | |
Ko te kawe wera i te 1200 ℃(w/mk) | 19.6 | |
Te whakarea whakareatanga werawera i1200 ℃(x 10-6/C) | 4.70 | |
Te ātete ru werawera | Tino pai | |
Max.pāmahana (℃) | 1600 |