Silicon carbide (SiC) rauemi karaihe kotahi he nui te whanui aputa ropu (~ Si 3 wa), te kawe waiariki tiketike (~ Si 3.3 wa GaAs 10 wa ranei), tiketike irahiko waiwai auau hekenga (~ Si 2.5 wa), hiko pakaru tiketike mara (~Si 10 wa ranei GaAs 5 wa) me etahi atu ahuatanga tino pai.
Ko nga reanga tuatoru o nga rauemi semiconductor ko te nuinga ko te SiC, GaN, taimana, me etahi atu, na te mea he nui ake te whanui aputa roopu (Eg) i te rite ranei ki te 2.3 volts electron (eV), e mohiotia ana ano he rauemi semiconductor aputa roopu whanui. Ka whakatauritea ki nga rauemi semiconductor reanga tuatahi me te tuarua, ko nga rauemi semiconductor reanga tuatoru he painga o te kawe werawera teitei, te waahi hiko pakaru teitei, te tere o te heke o te irahiko kukū me te kaha honohono teitei, ka taea te whakatutuki i nga whakaritenga hou o te hangarau hiko hou mo te teitei. te pāmahana, te kaha nui, te pehanga teitei, te auau teitei me te aukati iraruraru me etahi atu tikanga kino. He nui nga tumanakohanga tono i roto i nga mara o te arai o te motu, te rererangi, te aerospace, te torotoro hinu, te rokiroki whatu, me etahi atu, ka taea te whakaiti i te ngaronga o te kaha ki te neke atu i te 50% i roto i te maha o nga umanga rautaki penei i te whakawhitiwhiti whanui, te hiko o te ra, te hanga motuka, rama semiconductor, me te matiti atamai, a ka taea te whakaiti i te rōrahi taputapu neke atu i te 75%, he mea tino nui mo te whakawhanaketanga o te aoiao me te hangarau tangata.
Ka taea e te kaha Semicera te whakarato i nga kaihoko ki te Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; I tua atu, ka taea e matou te whakarato i nga kaihoko ki nga pepa epitaxial silicon carbide homogeneous me te heterogeneous; Ka taea hoki e matou te whakarite i te pepa epitaxial kia rite ki nga hiahia motuhake o nga kaihoko, a kaore he iti rawa o te tono.
NGA WHAKAMAHI WAFERING
*n-Pm=n-momo Pm-Kōeke,n-Ps=n-momo Ps-Kōeke,Sl=Hawhe-insulating
| Tūemi | 8-Inihi | 6-Inihi | 4-inihi | ||
| nP | n-Pm | n-Ps | SI | SI | |
| TTV(GBIR) | ≤6um | ≤6um | |||
| Kopere(GF3YFCD)-Uara Tino | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
| Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
| LTV(SBIR)-10mmx10mm | <2μm | ||||
| Tapa Wafer | Tirohanga | ||||
MATA OTI
*n-Pm=n-momo Pm-Kōeke,n-Ps=n-momo Ps-Kōeke,Sl=Hauwhā-Wāhanga
| Tūemi | 8-Inihi | 6-Inihi | 4-inihi | ||
| nP | n-Pm | n-Ps | SI | SI | |
| Whakaoti Mata | Taarua taha Optical Polish,Si- Kanohi CMP | ||||
| Ruarua Mata | (10um x 10um) Si-FaceRa≤0.2nm C-Mata Ra≤ 0.5nm | (5umx5um) Si-Face Ra≤0.2nm C-Mata Ra≤0.5nm | |||
| Tipi Tipi | Kore e Whakaaetia (te roa me te whanui≥0.5mm) | ||||
| Nuku | Kore e Whakaaetia | ||||
| Nga karawarawa(Si-kanohi) | Qty.≤5, Huihuinga Length≤0.5×wafer diameter | Qty.≤5, Huihuinga Length≤0.5×wafer diameter | Qty.≤5, Huihuinga Length≤0.5×wafer diameter | ||
| Kapiti | Kore e Whakaaetia | ||||
| Whakakorenga Tapa | 3mm | ||||
