4 Inihi SiC Substrate N-momo

Whakaahuatanga Poto:

Ka tukuna e Semicera te whānuitanga o nga momo angiangi 4H-8H SiC. He maha nga tau, he kaihanga me te kaiwhakarato o nga hua ki te ahumahi semiconductor me te photovoltaic. Ko o tatou hua matua ko: Pereti hata silicon carbide, waka waka waka waka, poti angiangi silicon carbide (PV & Semiconductor), ngongo oumu carbide silicon, nga hoe cantilever silicon carbide, chucks silicon carbide, kurupae carbide silicon, me nga paninga CVD SiC me TaC paninga. Ka kapi i te nuinga o nga maakete a te Pakeha me Amerika. Kei te tumanako matou ki te noho hei hoa mo te wa roa i Haina.

 

Taipitopito Hua

Tohu Hua

hangarau_1_2_rahi

Silicon carbide (SiC) rauemi karaihe kotahi he nui te whanui aputa ropu (~ Si 3 wa), te kawe waiariki tiketike (~ Si 3.3 wa GaAs 10 wa ranei), tiketike irahiko waiwai auau hekenga (~ Si 2.5 wa), hiko pakaru tiketike mara (~Si 10 wa ranei GaAs 5 wa) me etahi atu ahuatanga tino pai.

Ka taea e te kaha Semicera te whakarato i nga kaihoko ki te Conductive (Conductive), Semi-insulating (Semi-insulating), HPSI (High Purity semi-insulating) silicon carbide substrate; I tua atu, ka taea e matou te whakarato i nga kaihoko ki nga pepa epitaxial silicon carbide homogeneous me te heterogeneous; Ka taea hoki e matou te whakarite i te pepa epitaxial kia rite ki nga hiahia motuhake o nga kaihoko, a kaore he iti rawa o te tono.

Nga taonga

Whakaputa

Rangahau

Porekau

Tawhā Kiriata

Polytype

4H

Hapa takotoranga mata

<11-20 >4±0.15°

Tawhā Hiko

Dopant

n-momo Nitrogen

Te ātete

0.015-0.025ohm·cm

Tawhā Hangarau

Diamita

99.5 - 100mm

Mātotoru

350±25 μm

Te takotoranga papa tuatahi

[1-100]±5°

Te roa papatahi tuatahi

32.5±1.5mm

Turanga papatahi tuarua

90° CW mai i te papa tuatahi ±5°. mata kirika ki runga

Te roa papatahi tuarua

18±1.5mm

TTV

≤5 μm

≤10 μm

≤20 μm

LTV

≤2 μm(5mm*5mm)

≤5 μm(5mm*5mm)

NA

Kopere

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤20 μm

≤45 μm

≤50 μm

Mua (Si-mata) taratara (AFM)

Ra≤0.2nm (5μm*5μm)

Hanganga

Kiato paipa moroiti

≤1 ea/cm2

≤5 ea/cm2

≤10 ea/cm2

Nga poke whakarewa

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Kounga o mua

Mua

Si

Whakaoti mata

Si-mata CMP

Matūriki

≤60ea/wafer (rahi≥0.3μm)

NA

Nga karawarawa

≤2ea/mm. Roa whakaemi ≤Diameter

Roa whakahiato≤2*Diameter

NA

Te kiri karaka/rua/wauwau/wauwau/kapiti/parahanga

Karekau

NA

Nga kongakonga taha/nuo/whawhati/papa hex

Karekau

NA

Nga waahi polytype

Karekau

Horahanga whakahiato≤20%

Horahanga whakahiato≤30%

Tohu taiaho o mua

Karekau

Kounga Whakamuri

Mutunga tuara

C-kanohi CMP

Nga karawarawa

≤5ea/mm, Roa whakahiato≤2* Diameter

NA

He koha ki muri (nga maramara tapa)

Karekau

Te taratara o muri

Ra≤0.2nm (5μm*5μm)

Te tohu taiaho tuara

1 mm (mai i te taha o runga)

Tapa

Tapa

Chamfer

Te takai

Te takai

Ka whakakiia te putea o roto ki te hauota, ka whakakorehia te putea o waho.

Ripene angiangi maha, kua rite ki te epi.

*Tuhipoka: "NA" te tikanga kaore he tono Ko nga taonga kaore i whakahuahia ka pa ki te SEMI-STD.

Nga angiangi SiC

Te waahi mahi a Semicera Te waahi mahi Semicera 2 Miihini taputapu Te tukatuka CNN, te horoi matū, te paninga CVD Ta tatou ratonga


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