1. MōSilicon Carbide (SiC) Wafers Epitaxial
Ka hangaia nga angiangi epitaxial Silicon Carbide (SiC) ma te whakatakoto i tetahi paparanga karaihe kotahi ki runga i te angiangi ma te whakamahi i te kirikiri carbide kotahi te angiangi karaihe hei tïpako, i te nuinga o te waa ma te waipara matū (CVD). I roto i a raatau, kua rite te epitaxial silicon carbide ma te whakatipu i te paparanga epitaxial silicon carbide i runga i te taputapu carbide silicon conductive, ka hangaia ano ki nga taputapu mahi teitei.
2.Silicon Carbide Epitaxial WaferWhakatakotoranga
Ka taea e matou te whakarato 4, 6, 8 inihi N-momo 4H-SiC epitaxial wafers. Ko te angiangi epitaxial he hōkaiipurangi nui, he tere tere tere tere tere, he hau irahiko rua-ahu nui, me te kaha o te waahi pakaru. Ko enei taonga ka nui te pāmahana o te taputapu, te ngaohiko teitei, te tere whakawhiti tere, te iti o te aukati, te rahi iti me te taumaha marama.
3. SiC Epitaxial Tono
SiC epitaxial angiangiKei te whakamahia te nuinga i roto i te Schottky diode (SBD), whakarewa oxide semiconductor field effect transistor (MOSFET) junction field effect transistor (JFET), bipolar junction transistor (BJT), thyristor (SCR), insulated gate bipolar transistor (IGBT), e whakamahia ana. i roto i nga waahi ngaohiko iti, ngaohiko waenga me te ngaohiko teitei. I tenei wa,SiC epitaxial angiangimo nga tono ngaohiko teitei kei te waahi rangahau me te whanaketanga puta noa i te ao.
