850V High Power GaN-on-Si Epi Wafer

Whakaahuatanga Poto:

850V High Power GaN-on-Si Epi Wafer– Tirohia te reanga o muri mai o te hangarau semiconductor me te 850V High Power GaN-on-Si Epi Wafer a Semicera, i hangaia mo te mahi pai me te pai i roto i nga tono ngaohiko teitei.


Taipitopito Hua

Tohu Hua

Semicerawhakataki te850V High Power GaN-on-Si Epi Wafer, he pakaruhanga i roto i te auahatanga semiconductor. Ko tenei wafer epi matatau e whakakotahi ana i te kaha nui o Gallium Nitride (GaN) me te utu-whai hua o Silicon (Si), ka hangaia he otinga kaha mo nga tono ngaohiko teitei.

Āhuatanga matua:

Te Whakahaere Ngaohiko Nui: I hangaia hei tautoko ki te 850V, he pai tenei GaN-on-Si Epi Wafer mo te tono hiko hiko, kia kaha ake ai te pai me te mahi.

Whakanuia te Kiato Mana: Ma te pai o te hikohiko hiko me te kawe werawera, ka taea e te hangarau GaN nga hoahoa kiato me te pikinga o te hiko.

Utu-Painga Rongoa: Ma te whakamahi i te silicon hei tïpako, ka tukuna e tenei angiangi epi he utu utu nui ki nga angiangi GaN tuku iho, me te kore e whakararu i te kounga me te mahi.

Awhe Taupānga Whānui: He tino pai mo te whakamahi i nga kaitahuri hiko, RF amplifiers, me etahi atu taputapu hiko hiko teitei, e whakarite ana i te pono me te mauroa.

Te torotoro i te heke mai o te hangarau ngaohiko teitei me Semicera's850V High Power GaN-on-Si Epi Wafer. I hoahoatia mo nga tono tapahi-mata, ma tenei hua e whakarite kia mahi o taputapu hiko me te tino pai me te pono. Whiriwhiria a Semicera mo o hiahia reanga hikohiko.

Nga taonga

Whakaputa

Rangahau

Porekau

Tawhā Kiriata

Polytype

4H

Hapa takotoranga mata

<11-20 >4±0.15°

Tawhā Hiko

Dopant

n-momo Nitrogen

Te ātete

0.015-0.025ohm·cm

Tawhā Hangarau

Diamita

150.0±0.2mm

Mātotoru

350±25 μm

Te takotoranga papa tuatahi

[1-100]±5°

Te roa papatahi tuatahi

47.5±1.5mm

Papatahi tuarua

Karekau

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Kopere

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

Warp

≤35 μm

≤45 μm

≤55 μm

Mua (Si-mata) taratara (AFM)

Ra≤0.2nm (5μm*5μm)

Hanganga

Kiato paipa moroiti

<1 ea/cm2

<10 ea/cm2

<15 ea/cm2

Nga poke whakarewa

≤5E10atoms/cm2

NA

BPD

≤1500 ea/cm2

≤3000 ea/cm2

NA

TSD

≤500 ea/cm2

≤1000 ea/cm2

NA

Kounga o mua

Mua

Si

Whakamutu mata

Si-mata CMP

Matūriki

≤60ea/wafer (rahi≥0.3μm)

NA

Nga karawarawa

≤5ea/mm. Roa whakaemi ≤Diameter

Roa whakahiato≤2*Diameter

NA

Te kiri karaka/rua/wauwau/wauwau/kapiti/parahanga

Karekau

NA

Nga kongakonga taha/nuo/whawhati/papa hex

Karekau

Nga waahi polytype

Karekau

Horahanga whakahiato≤20%

Horahanga whakahiato≤30%

Tohu taiaho o mua

Karekau

Kounga Whakamuri

Mutunga tuara

C-kanohi CMP

Nga karawarawa

≤5ea/mm, Roa whakahiato≤2* Diameter

NA

He koha ki muri (nga maramara tapa)

Karekau

Te taratara o muri

Ra≤0.2nm (5μm*5μm)

Te tohu taiaho tuara

1 mm (mai i te taha o runga)

Tapa

Tapa

Chamfer

Te takai

Te takai

Epi-reri me te takai korehau

Takai rīpene angiangi maha

*Tuhipoka: "NA" te tikanga karekau he tono Ko nga taonga kaore i whakahuahia ka pa ki te SEMI-STD.

hangarau_1_2_rahi
Nga angiangi SiC

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