Tino parakore SiC Carrier/Susceptor

Whakaahuatanga Poto:

Kei te mohiotia ano te kopae mauri Silicon carbide ko te paepae SIC, te kōpae etching silicon carbide, te kōpae etching ICP. Paetahi Silicon carbide mo te tarai rama (SiC tray) φ600mm he taputapu motuhake mo te kirikiri hohonu (ICP miihini etching).

Tukuna he imeera ki a matou

Taipitopito Hua

Tohu Hua

Whakaahuatanga

He pai rawa atu nga taonga miihini Silicon carbide i te pāmahana rūma, penei i te kaha teitei, te pakeke teitei, te teitei elastic modulus, me era atu, he pai rawa atu te pumau o te pāmahana-nui penei i te kawe waiariki teitei, te iti o te whakareatanga whakareatanga waiariki, me te pai o te pakari me te whatu. mahi tukatuka.
He pai rawa atu mo te whakaputa i nga waahanga karaiti mo nga taputapu ara iahiko whakauru penei i nga miihini lithography, te nuinga ka whakamahia ki te hanga i te kaikawe / susceptor SiC, poti angiangi SiC, kopae ngote, te pereti whakamahana wai, te whakaata ine tika, te kupenga me etahi atu waahanga hanganga uku.

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Nga painga

Te ātete pāmahana teitei: te whakamahi noa i te 1800 ℃
Te kaha o te waiariki: he rite ki te papanga kauwhata
Te pakeke: te pakeke tuarua ki te taimana, boron nitride
Te aukati waikura: te waikawa kaha me te kawakore kaore he waikura ki a ia, he pai ake te parenga waikura i te tungsten carbide me te alumina
Te taumaha mama: iti kiato, tata ki te konumohe
Karekau he rerekee: he iti te whakarea o te roha wera
Te ātete o te werawera: ka taea e ia te tu atu i nga huringa pāmahana koi, te aukati i te wiariki, me te kaha o te mahi
Ko te kaikawe carbide silicone penei i te kaikawe etching sic, ICP etching susceptor, e whakamahia nuitia ana i roto i te CVD semiconductor, te pupuhi korehau me etahi atu.

Nga painga

Taonga	Uara	Tikanga
Kiato	3.21 g/cc	Totohu-maana me te rahi
Te wera motuhake	0.66 J/g °K	Kohiko hikoi laser
Te kaha whakaheke	450 MPa560 MPa	4 piko piko, RT4 piko piko, 1300°
Te pakari o te whati	2.94 MPa m1/2	Microindentation
Te pakeke	2800	Vicker's, 500g te utaina
Elastic ModulusYoung's Modulus	450 GPa430 GPa	4 pt piko, RT4 pt piko, 1300 °C
Te rahi o te witi	2 – 10 µm	SEM

Kōtaha Kamupene

Ko WeiTai Energy Technology Co., Ltd. he kaiwhakarato matua o nga karamu semiconductor matatau me te kaihanga anake i Haina ka taea te whakarato i nga wa ano he parapara silicon carbide (ina koa ko te Recrystallized SiC) me te paninga CVD SiC. I tua atu, kei te kaha ano ta matou kamupene ki nga mara karaera penei i te alumina, te nitride konumohe, te zirconia, me te nitride silicon, etc.

Ko o tatou hua matua tae atu ki: kopae etching silicon carbide, tow poti carbide silicon, wafer wafer silicon carbide (Photovoltaic&Semicconductor), ngongo oumu carbide silicon, te hoe carbide cantilever, chucks silicon carbide, silicon carbide beam, me te paninga CVD SiC me te TaC paninga. Ko nga hua e whakamahia ana i roto i te ahumahi semiconductor me te photovoltaic, penei i nga taputapu mo te tipu o te karaihe, te epitaxy, te tarai, te kapi, te paninga me nga oumu diffusion, etc.
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