Nga painga
Te teitei o te wera o te waiora
Tino pai te parenga waikura
Pai Abrasion ātete
Te whakarea teitei o te kawe wera
Whakahinuhinu-whaiaro, iti kiato
Te pakeke teitei
Hoahoa ritenga.
Nga tono
-Mahere-aukati: te ngahere, te pereti, te puha kirikiri, te arai huripari, te peera huri, me era atu...
-Te Maama Teitei: SiC Slab, Te Tiini Umu Tube, Te Radiant Tube, te parapara, Te Hunga Whakawera, Roera, Te Kurupae, Te Whakawhiti Wera, Te Puawaa Matao, Te Puha Kaitahu, Te Tube Tiaki Thermocouple, te Poti SiC, Te Hanganga Motu o Kiln, Setter, etc.
-Silicon Carbide Semiconductor: SiC wafer boat, sic chuck,sic hoe, sic cassette, sic diffusion tube, wafer fork, suction plate, guideway, etc.
-Silicon Carbide Seal Field: nga momo hiri hiri katoa, te kawe, te ngahere, me era atu.
-Photovoltaic Field: Cantilever Hoe, Grinding Barrel, Silicon Carbide Roller, etc.
-Mahi Puhiko Lithium
Nga Tikanga Tinana o SiC
| Taonga | Uara | Tikanga |
| Kiato | 3.21 g/cc | Totohu-maana me te rahi |
| Te wera motuhake | 0.66 J/g °K | Kohiko hikoi laser |
| Te kaha whakaheke | 450 MPa560 MPa | 4 piko piko, RT4 piko piko, 1300° |
| Te pakari o te whati | 2.94 MPa m1/2 | Microindentation |
| Te pakeke | 2800 | Vicker's, 500g te utaina |
| Elastic ModulusYoung's Modulus | 450 GPa430 GPa | 4 pt piko, RT4 pt piko, 1300 °C |
| Te rahi o te witi | 2 – 10 µm | SEM |
Ngaaahua Ngawha o SiC
| Te Whakawhitinga Ngawha | 250 W/m °K | Tikanga rama laser, RT |
| Roha Ngawha (CTE) | 4.5 x 10-6 °K | Te pāmahana rūma ki te 950 °C, te dilatometer silica |
Tawhā Hangarau
| Tūemi | Waeine | Raraunga | ||||
| RBSiC(SiSiC) | NBSiC | SSiC | RSiC | OSiC | ||
| ihirangi SiC | % | 85 | 75 | 99 | 99.9 | ≥99 |
| He ihirangi silicon kore utu | % | 15 | 0 | 0 | 0 | 0 |
| Paemahana ratonga Max | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Kiato | g/cm3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Porosity tuwhera | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Te kaha piko 20℃ | Мpa | 250 | 160 | 380 | 100 | / |
| Te kaha piko 1200 ℃ | Мpa | 280 | 180 | 400 | 120 | / |
| Kōwae o te elasticity 20 ℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus o te elasticity 1200 ℃ | Gpa | 300 | / | / | 200 | / |
| Te kawe werawera 1200 ℃ | W/mK | 45 | 19.6 | 100-120 | 36.6 | / |
| Te whakarea o te roha wera | K-1X10-6 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | Kg/mm2 | 2115 | / | 2800 | / | / |
Ko te paninga carbide silicon CVD i runga i te mata o waho o te rerystallized silicon carbide ceramic hua ka taea te tae ki te ma o neke atu i te 99.9999% ki te whakatutuki i nga hiahia o nga kaihoko i roto i te ahumahi semiconductor.
