Whakaahuatanga Hua
4h-n 4inihi 6inihi dia100mm sic kakano angiangi 1mm te matotoru mo te tipu ingot
Rahi ritenga/2inihi/3inihi/4inihi/6inihi 6H-N/4H-SEMI/ 4H-N SIC ingots/Te parakore teitei 4H-N 4inihi 6inihi te 150mm silicon carbide karaihe kotahi (sic) substrates wafersS/ Whakaritea rite-tapahia sic wafersProduction 4inihi kōeke 4H-N 1.5mm SIC Wafers mo te karaihe purapura
Mo te Silicon Carbide (SiC)Crystal
Ko te Silicon carbide (SiC), e mohiotia ana ko te carborundum, he hikohiko kei roto te silicon me te waro me te tauira matū SiC. Kei te whakamahia te SiC i roto i nga taputapu hikohiko hikohiko e mahi ana i nga wera teitei, i nga ngaohiko teitei ranei, e rua ranei. Ko te SiC tetahi o nga waahanga nui o te LED, he taputapu rongonui mo te whakatipu i nga taputapu GaN, a ka mahi ano hoki hei whakamahana wera i roto i te teitei- nga rama hiko.
Whakaahuatanga
| Taonga | 4H-SiC, Kiriata Kotahi | 6H-SiC, Kiriata Kotahi |
| Tawhā Reihana | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Raupapa Tāpae | ABCB | ABCACB |
| Mohs pakeke | ≈9.2 | ≈9.2 |
| Kiato | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Whakarea Roha | 4-5×10-6/K | 4-5×10-6/K |
| Taurangi Refraction @750nm | kāo = 2.61 | kāo = 2.60 |
| Dielectric Tonu | c~9.66 | c~9.66 |
| Te Waawera (Momo-N, 0.02 ohm.cm) | a~4.2 W/cm·K@298K |
|
| Waahanga Waariki | a~4.9 W/cm·K@298K | a~4.6 W/cm·K@298K |
| Roopu-aputa | 3.23 eV | 3.02 eV |
| Waahi-Whakararo Mahere Hiko | 3-5×106V/cm | 3-5×106V/cm |
| Terenga Paruru Haumaru | 2.0×105m/s | 2.0×105m/s |
