SiC Cantilever hoeKei te whakamahia i roto i te oumu whakakikoruatanga o te ahumahi photovoltaic mo te whakakikorua i te monocrystalline me te polycrystalline silicon wafers. Ko ona ahuatanga ka taea e ia te tu ki te pāmahana teitei me te waikura, ka roa te ora.
Ko teSiC Cantilever hoeka tukuna he poti SiC / poti kiripaka e kawe ana i nga angiangi hiraka ki roto i te ngongo oumu whakakikoruatanga werawera teitei.
Te roa o to tatouSiC Cantilever hoemai i te 1,500 ki te 3,500 mm.SiC Cantilever hoe'sKa taea te hanga i te rahi kia rite ki nga korero a te kaihoko.
Nga ahuatanga tinana o Silicon Carbide Recrystallized | |
Taonga | Uara Angamaheni |
Te pāmahana mahi (°C) | 1600°C (me te hāora), 1700°C (whakaiti taiao) |
ihirangi SiC | > 99.96% |
Ko te ihirangi Si Free | < 0.1% |
Kiato rahi | 2.60-2.70 g/cm3 |
Ka kitea te porosity | < 16% |
Te kaha kōpeketanga | > 600 MPa |
Te kaha piko o te makariri | 80-90 MPa (20°C) |
Te kaha piko wera | 90-100 MPa (1400°C) |
Te roha wera @1500°C | 4.70 10-6/°C |
Te werawera @1200°C | 23 W/m•K |
Kōwae rapa | 240 GPa |
Te ātete ru werawera | Tino pai |