Ko te Silicon carbide he momo carbide waihanga me te ngota ngota SiC. I te wa e whakakahangia ana, ka hangahia te silica me te waro i te pāmahana teitei i runga ake i te 2000°C. Ko te carbide silicone he 3.18g/cm3 te kiato ariā, he Mohs pakeke e whai ana i te taimana, me te microhardness o 3300kg/mm3 i waenga i te 9.2 me te 9.8. Na te kaha o te pakeke me te kaha o te kakahu, kei a ia nga ahuatanga o te wera nui o te wera me te whakamahia mo nga momo momo miihini-aukati, te waikura me nga waahanga miihini teitei. He momo hou o te hangarau karaera kakahu-atete.
1, āhuatanga matū.
(1) Atete oxidation: I te wa e wera ana te rauemi carbide silicon ki te 1300 ° C i roto i te rangi, ka timata te paparanga whakamarumaru o te silicon dioxide ki runga i te mata o tana karaihe carbide silicon. Na te matotoru o te paparanga whakamarumaru, kei te haere tonu te oxidize o te carbide silicon o roto, kia pai ai te aukati oxidation o te carbide silicon. Ka eke te pāmahana ki runga ake i te 1900K(1627 ° C), ka tiimata te pakaru o te kiriata whakamarumaru hauhauora, ka kaha ake te whakamaaramatanga o te carbide silicon, na ko te 1900K te pāmahana mahi o te silicon carbide i roto i te hau whakapouri.
(2) Atete waikawa me te kawakore: na te mahi o te kiriata whakamarumaru hauhaurua, he taonga a te carbide silicon i roto i te mahi o te kiriata whakamarumaru haurua.
2、Ko nga ahuatanga o te tinana me te miihini.
(1) Kiato: He tino tata te kiato matūriki o nga momo tioata carbide silicon, e kiia ana ko te 3.20g/mm3, a, ko te 1.2-1.6g/mm3 te kiato putunga taiao o te kirikiri carbide abrasives, i runga i te rahi o te matūriki, hanganga rahi matūriki me te hanga rahi matūriki.
(2) Maamaa: Ko te Mohs pakeke o te silicon carbide he 9.2, ko te micro-density o Wessler ko 3000-3300kg / mm2, ko te pakeke o Knopp he 2670-2815kg / mm, he teitei ake te abrasive i te corundum, tata ki te taimana, cubic boron nitride me te boron carbide.
(3) Waariki te kawe: ko nga hua carbide silicon he nui te kawe waiariki, he iti te whakareatanga whakareatanga waiariki, he nui te parenga waiariki, he taonga whakaahuru-kounga teitei.
3. Nga taonga hiko.
| Tūemi | Waeine | Raraunga | Raraunga | Raraunga | Raraunga | Raraunga |
| RBsic(sic) | NBSiC | SSiC | RSiC | OSiC | ||
| ihirangi SiC | % | 85 | 76 | 99 | ≥99 | ≥90 |
| He ihirangi silicon kore utu | % | 15 | 0 | 0 | 0 | 0 |
| Paemahana ratonga Max | ℃ | 1380 | 1450 | 1650 | 1620 | 1400 |
| Kiato | g/cm^3 | 3.02 | 2.75-2.85 | 3.08-3.16 | 2.65-2.75 | 2.75-2.85 |
| Porosity tuwhera | % | 0 | 13-15 | 0 | 15-18 | 7-8 |
| Te kaha piko 20℃ | Mpa | 250 | 160 | 380 | 100 | / |
| Te kaha piko 1200 ℃ | Mpa | 280 | 180 | 400 | 120 | / |
| Kōwae o te elasticity 20 ℃ | Gpa | 330 | 580 | 420 | 240 | / |
| Modulus o te elasticity 1200 ℃ | Gpa | 300 | / | / | 200 | / |
| Te kawe werawera 1200 ℃ | W/mk | 45 | 19.6 | 100-120 | 36.6 | / |
| Te whakarea o te roha wera | K^-lx10^-8 | 4.5 | 4.7 | 4.1 | 4.69 | / |
| HV | kg/m^m2 | 2115 | / | 2800 | / | / |
